Samsung 16Gb NAND Flash Memory

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Samsung’s 51nm NAND flash chips can be produced 60 percent more efficiently than those produced with 60nm process technology. Samsung achieved this new migration milestone just eight months after announcing production of its 60nm 8Gb NAND flash last August. The new 16Gb chip which has a multi-level cell (MLC) structure can facilitate capacity expansion by offering 16 gigabytes (GBs) of memory in a single memory card. Furthermore, by applying the new process technology, Samsung has accelerated the chip’s read and write speeds by approximately 80 percent over current MLC data processing speeds.

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